Electromigration, models and atomistic interpretationKIRCHHEIM, R.Quality and reliability engineering international. 1993, Vol 9, Num 4, pp 287-293, issn 0748-8017Conference Paper

17th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2006), Wuppertal, Germany, 3-6 October 2006BALK, L. J; GERLING, W. H; WOLFGANG, E et al.Microelectronics and reliability. 2006, Vol 46, Num 9-11, issn 0026-2714, 544 p.Conference Proceedings

A new approach to statistically modelling the time dependent oxide breakdownVOLLERTSEN, R.-P.Quality and reliability engineering international. 1993, Vol 9, Num 4, pp 325-331, issn 0748-8017Conference Paper

The impact of electronic components on the reliability of carsKUMPFMÜLLER, H.-G.Quality and reliability engineering international. 1993, Vol 9, Num 4, pp 251-255, issn 0748-8017Conference Paper

Electrical steering of vehicles - : fault-tolerant analysis and designBLANKE, Mogens; THOMSEN, Jesper Sandberg.Microelectronics and reliability. 2006, Vol 46, Num 9-11, pp 1421-1432, issn 0026-2714, 12 p.Conference Paper

Electro-thermal short pulsed simulation for SOI technologyENTRINGER, Christophe; FLATRESSE, Philippe; GALY, Philippe et al.Microelectronics and reliability. 2006, Vol 46, Num 9-11, pp 1482-1485, issn 0026-2714, 4 p.Conference Paper

Evaluation of scanning capacitance microscopy sample preparation by focused ion beamRODRIGUEZ, N; ADRIAN, J; GROSJEAN, C et al.Microelectronics and reliability. 2006, Vol 46, Num 9-11, pp 1554-1557, issn 0026-2714, 4 p.Conference Paper

Fault diagnosis technology based on transistor behavior analysis for physical analysisSANADA, M; YOSHIZAWA, Y.Microelectronics and reliability. 2006, Vol 46, Num 9-11, pp 1575-1580, issn 0026-2714, 6 p.Conference Paper

Electromigration failure distributions of dual damascene Cu / low - : k interconnectsOATES, A. S; LEE, S. C.Microelectronics and reliability. 2006, Vol 46, Num 9-11, pp 1581-1586, issn 0026-2714, 6 p.Conference Paper

ESD susceptibility of submicron air gapsWOLF, Heinrich; GIESER, Horst; BONFERT, Detlef et al.Microelectronics and reliability. 2006, Vol 46, Num 9-11, pp 1587-1590, issn 0026-2714, 4 p.Conference Paper

Post-breakdown leakage resistance and its dependence on device areaCHEN, Tze Wee; ITO, Choshu; LOH, William et al.Microelectronics and reliability. 2006, Vol 46, Num 9-11, pp 1612-1616, issn 0026-2714, 5 p.Conference Paper

Charging of radiation induced defects in RF MEMS dielectric filmsEXARCHOS, M; PAPANDREOU, E; PONS, P et al.Microelectronics and reliability. 2006, Vol 46, Num 9-11, pp 1695-1699, issn 0026-2714, 5 p.Conference Paper

New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditionsBARLINI, D; CIAPPA, M; CASTELLAZZI, A et al.Microelectronics and reliability. 2006, Vol 46, Num 9-11, pp 1772-1777, issn 0026-2714, 6 p.Conference Paper

Investigation of MOSFET failure in soft-switching conditionsIANNUZZO, F; BUSATTO, G; ABBATE, C et al.Microelectronics and reliability. 2006, Vol 46, Num 9-11, pp 1790-1794, issn 0026-2714, 5 p.Conference Paper

Dynamic voltage stress effects on nMOS varactorCHUANZHAO YU; YUAN, J. S; ENJUN XIAO et al.Microelectronics and reliability. 2006, Vol 46, Num 9-11, pp 1812-1816, issn 0026-2714, 5 p.Conference Paper

Reliability of high temperature solder alternativesMCCLUSKEY, F. P; DASH, M; WANG, Z et al.Microelectronics and reliability. 2006, Vol 46, Num 9-11, pp 1910-1914, issn 0026-2714, 5 p.Conference Paper

Degradation behaviour of highly coherent 1.55 μm long-cavity multiple quantum well DFB lasersFUKUDA, M; KANO, F; KUROSAKI, T et al.Quality and reliability engineering international. 1993, Vol 9, Num 4, pp 363-365, issn 0748-8017Conference Paper

Failure mechanisms in life-tested HEMTsANDERSON, W. T; CHRISTIANSON, K. A; MOGLESTUE, C et al.Quality and reliability engineering international. 1993, Vol 9, Num 4, pp 367-370, issn 0748-8017Conference Paper

Simulation, a tool for designing-in reliabilityBROMBACHER, A; VAN GEEST, E; ARENDSEN, R et al.Quality and reliability engineering international. 1993, Vol 9, Num 4, pp 239-249, issn 0748-8017Conference Paper

Power cycling tests for accelerated ageing of ultracapacitorsBRIAT, O; LAJNEF, W; VINASSA, J.-M et al.Microelectronics and reliability. 2006, Vol 46, Num 9-11, pp 1445-1450, issn 0026-2714, 6 p.Conference Paper

ATPG Scan Logic Failure Analysis : a case study of logic ICs - fault isolation, defect mechanism identification and yield improvementLIMING GAO; BURMER, Christian; SIEGELIN, Frank et al.Microelectronics and reliability. 2006, Vol 46, Num 9-11, pp 1458-1463, issn 0026-2714, 6 p.Conference Paper

Lock-in thermal IR imaging using a solid immersion lensBREITENSTEIN, O; ALTMANN, F; RIEDIGER, T et al.Microelectronics and reliability. 2006, Vol 46, Num 9-11, pp 1508-1513, issn 0026-2714, 6 p.Conference Paper

A 3D analysis technique for detecting trace metal contaminationGOTO, Yasunori; HIGUCHI, Tomokatsu.Microelectronics and reliability. 2006, Vol 46, Num 9-11, pp 1542-1547, issn 0026-2714, 6 p.Conference Paper

Localization and physical analysis of a complex SRAM failure in 90nm technologyZHONGLING QIAN; SIEGELIN, Frank; TIPPELT, Birgit et al.Microelectronics and reliability. 2006, Vol 46, Num 9-11, pp 1558-1562, issn 0026-2714, 5 p.Conference Paper

Novel ESD strategy for high voltage non-volatile programming pin applicationIM, Kyoung-Sik; KO, Jae-Hyok; KIM, Suk-Jin et al.Microelectronics and reliability. 2006, Vol 46, Num 9-11, pp 1664-1668, issn 0026-2714, 5 p.Conference Paper